Datasheet Details
| Part number | 2SK682 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 236.47 KB |
| Description | N-Channel MOSFET Transistor |
| Download | 2SK682 Download (PDF) |
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Overview: isc N-Channel MOSFET Transistor.
| Part number | 2SK682 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 236.47 KB |
| Description | N-Channel MOSFET Transistor |
| Download | 2SK682 Download (PDF) |
|
|
|
·Drain Current –ID=12A@ TC=25℃ ·Drain Source Voltage- : VDSS=450V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·low on–resistance ·High speed switching ·Low drive current ·No secondary breakdown ·Suitable for switchingregulator, DC–DC convertor ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 450 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 12 A Ptot Total Dissipation@TC=25℃ 100 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SK682 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0;
ID= 10mA VGS(TH) Gate Threshold Voltage VDS= 10V;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SK682 | N-Channel MOSFET | Renesas Technology |
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