Datasheet Summary
isc N-Channel MOSFET Transistor
DESCRIPTION
- Drain Current
- ID=12A@ TC=25℃
- Drain Source Voltage-
: VDSS=450V(Min)
- Fast Switching Speed
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- low on- resistance
- High speed switching
- Low drive current
- No secondary breakdown
- Suitable for switchingregulator, DC- DC...
