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2SK745 Datasheet N-Channel MOSFET Transistor

Manufacturer: Inchange Semiconductor

General Description

·Designed for use in switch mode power supplies and general purpose applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 50 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 20 A PD Total Dissipation @TC=25℃ 100 W TJ Max.

Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SK745 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor 2SK745 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-SourceBreakdown Voltage VGS= 0;

Overview

isc N-Channel MOSFET Transistor.

Key Features

  • Drain Current.
  • ID=20A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 50V(Min).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.