Datasheet Details
| Part number | 2SK756 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 234.95 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet |
 2SK756 Datasheet
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| Part number | 2SK756 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 234.95 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet |
2SK756 Datasheet
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·Drain Current –ID=8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 200 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 8 A Ptot Total Dissipation@TC=25℃ 40 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W 2SK756 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0;
isc N-Channel MOSFET Transistor.
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