Datasheet4U Logo Datasheet4U.com

2SK767 - N-Channel MOSFET Transistor

Datasheet Summary

Description

Drain Current ID=5A@ TC=25℃ Drain Source Voltage- : VDSS= 500V(Min) Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching

📥 Download Datasheet

Datasheet preview – 2SK767

Datasheet Details

Part number 2SK767
Manufacturer Inchange Semiconductor
File Size 234.87 KB
Description N-Channel MOSFET Transistor
Datasheet download datasheet 2SK767 Datasheet
Additional preview pages of the 2SK767 datasheet.
Other Datasheets by Inchange Semiconductor

Full PDF Text Transcription

Click to expand full text
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 5 A Ptot Total Dissipation@TC=25℃ 50 W Tj Max.
Published: |