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2SK906 - N-Channel MOSFET Transistor

Datasheet Summary

Description

Drain Current ID=32A@ TC=25℃ Drain Source Voltage- : VDSS=100V(Min) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed especially for low voltage.

high speed applications.

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Datasheet Details

Part number 2SK906
Manufacturer Inchange Semiconductor
File Size 203.61 KB
Description N-Channel MOSFET Transistor
Datasheet download datasheet 2SK906 Datasheet
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isc N-Channel MOSFET Transistor 2SK906 DESCRIPTION ·Drain Current –ID=32A@ TC=25℃ ·Drain Source Voltage- : VDSS=100V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed especially for low voltage. ·high speed applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 100 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 32 A Ptot Total Dissipation@TC=25℃ 125 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 35 ℃/W isc website：www.iscsemi.
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