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isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID= 15A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 120V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.15Ω(Max) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low voltage, high speed power switching
applications such as switching regulators, converters, solenoid and relay drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
120
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
15
A
Ptot
Total Dissipation@TC=25℃
60
W
Tj
Max.
2SK922 Datasheet
