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2SK960 - N-Channel MOSFET Transistor

Download the 2SK960 datasheet PDF. This datasheet also covers the 2SK960-MR variant, as both devices belong to the same n-channel mosfet transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

and solenoid drive.

Key Features

  • Drain Current : ID= 3.0A@ TC=25℃.
  • Drain Source Voltage : VDSS= 900V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 5.0Ω(Max) @ VGS= 10V.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SK960-MR-InchangeSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
2SK960 N-CHANNEL SILICON POWER MOSFET Fuji
2SK960-MR N-CHANNEL SILICON POWER MOSFET Fuji Electric
2SK961 N-CHANNEL SILICON POWER MOSFET Fuji Electric
2SK962 N-Channel Silicon Power MOS-FET Fuji Electric
2SK962-01 N-Channel Silicon Power MOS-FET Fuji Electric

Other Datasheets by Inchange Semiconductor

Part Number Description
2SK960-MR N-Channel MOSFET Transistor
2SK961 N-Channel MOSFET Transistor
2SK962 N-Channel MOSFET Transistor
2SK900 N-Channel MOSFET Transistor
2SK901 N-Channel MOSFET Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor 2SK960-MR FEATURES ·Drain Current : ID= 3.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.0Ω(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 900 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 3.0 A IDM Drain Current-Single Pluse 12 A PD Total Dissipation @TC=25℃ 40 W TJ Max.