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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK995
DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage-
: VDSS=550V(Min) ·Fast Switching Speed
APPLICATIONS ·Designed for high voltage, high speed power switching
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE
NIT
VDSS VGS ID Ptot Tj Tstg
Drain-Source Voltage (VGS=0)
550 V
Gate-Source Voltage
±20
V
Drain Current-continuous@ TC=25℃ 5 A
Total Dissipation@TC=25℃
60 W
Max. Operating Junction Temperature
150
℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Rth j-a
Thermal Resistance,Junction to Case
1.0
Thermal Resistance,Junction to Ambient 62.5
℃/W ℃/W
isc website:www.iscsemi.