2sc2433 Description
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 50μA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA.