Datasheet Details
| Part number | 2sc2433 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.40 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2sc2433_InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2sc2433 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.40 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2sc2433_InchangeSemiconductor.pdf |
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·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 120V(Min) ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SA1043 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power switching applications ·High frequency power amplifier ·Switching regulators ·DC-DC converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 30 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 150 W 175 ℃ Tstg Storage Temperature Range -65~175 ℃ 2SC2433 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 50μA;
IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SC2433 | Silicon High Speed Power Transistor | Fujitsu |
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