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2sc2433 - Silicon NPN Power Transistor

General Description

High Collector-Emitter Breakdown Voltage- V(BR)CEO= 120V(Min) High Current Capability Wide Area of Safe Operation Complement to Type 2SA1043 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power switching applications

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isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 120V(Min) ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SA1043 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power switching applications ·High frequency power amplifier ·Switching regulators ·DC-DC converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 30 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 150 W 175 ℃ Tstg Storage Temperature Range -65~175 ℃ 2SC2433 isc website：www