| Part number | 2sc4159 |
|---|---|
| Datasheet | 2sc4159_InchangeSemiconductor.pdf |
| File Size | 189.59 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
|
|
·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 160V (Min) ·Large Current Capacity ·plement to Type 2SA1606 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-voltage switching, AF power amplifier, 100W output predrivers. IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SC4159 | NPN Epitaxial Planar Silicon Transistors | Sanyo Semicon Device |
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