2sc4159 Description
·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 160V (Min) ·Large Current Capacity ·plement to Type 2SA1606 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-voltage switching, AF power amplifier, 100W output predrivers. IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown...