30N12
30N12 is N-Channel MOSFET Transistor manufactured by Inchange Semiconductor.
FEATURES
- Drain Current ID= 30A@ TC=25℃
- Drain Source Voltage-
: VDSS= 120V(Min)
- Static Drain-Source On-Resistance
: RDS(on) = 0.075Ω(Max)
- Fast Switching
- APPLICATIONS
- Switching power supplies,converters,AC and DC motor controls
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS VGS
Drain-Source Voltage Gate-Source Voltage-Continuous
120 ±30
ID Drain Current-Continuous
30 A
IDM Drain Current-Single Plused
100 A
PD Total Dissipation @TC=25℃
120 W
Tj Max. Operating Junction Temperature 150 ℃
Tstg Storage Temperature
-55~150 ℃
- THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT 0.83 ℃/W isc website:.iscsemi.cn
1 isc & iscsemi is registered trademark
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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification
- ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER...