Download 35N10 Datasheet PDF
Inchange Semiconductor
35N10
FEATURES - Drain Current ID= 35A@ TC=25℃ - Drain Source Voltage- : VDSS= 100V(Min) - Static Drain-Source On-Resistance : RDS(on) = 0.055Ω(Max) - Fast Switching - APPLICATIONS - Switching power supplies,converters,AC and DC motor controls - ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 100 ±30 ID Drain Current-Continuous 35 A IDM Drain Current-Single Plused 100 A PD Total Dissipation @TC=25℃ 150 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ - THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.83 ℃/W isc website:.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdf Factory Pro .fineprint.cn INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification - ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER...