36N06 - N-Channel MOSFET Transistor

Datasheet Summary

Features

Static drain-source on-resistance: RDS(on)≤40mΩ.
Enhancement mode:.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

Inchange Semiconductor

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Datasheet Details

Part number	36N06
Manufacturer	Inchange Semiconductor
File Size	242.61 KB
Description	N-Channel MOSFET Transistor
Datasheet	36N06 Datasheet
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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤40mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High current capability ·Low gate charge ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±15 ID Drain Current-Continuous 36 IDM Drain Current-Single Pulsed 144 PD Total Dissipation @TC=25℃ 120 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -65~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 1.25 62 UNIT ℃/W ℃/W 36N06 isc website：www.

Published: Jul 26, 2016 |