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3AD53 - Silicon PNP Power Transistor

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DC Current Gain- : hFE=20-140@IC= -4A Collector-Emitter Saturation Voltage- : VCE(sat)= -1.0V(Max)@ IC= -4A APPLICATIONS Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Vol

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Part number 3AD53
Manufacturer Inchange Semiconductor
File Size 147.76 KB
Description Silicon PNP Power Transistor
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    INCHANGE Semiconductor isc Silicon PNP Power Transistors DESCRIPTION ·DC Current Gain- : hFE=20-140@IC= -4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= -1.0V(Max)@ IC= -4A · APPLICATIONS ·Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -24 V VEBO Emitter-Base Voltage -20 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=55℃ TJ Junction Temperature -6 A 20 W 150 ℃ Tstg Storage Temperature -55-150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.75 UNIT ℃/W isc Product Specification 3AD53 isc website：www.iscsemi.
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