3AD53
DESCRIPTION
- DC Current Gain-
: h FE=20-140@IC= -4A
- Collector-Emitter Saturation Voltage-
: VCE(sat)= -1.0V(Max)@ IC= -4A
- APPLICATIONS
- Designed for general-purpose switching and amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-70 V
VCEO
Collector-Emitter Voltage
-24 V
VEBO
Emitter-Base Voltage
-20 V
IC Collector Current-Continuous
Collector Power Dissipation @TC=55℃
TJ Junction Temperature
-6 A 20 W 150 ℃
Tstg Storage Temperature
-55-150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX 1.75
UNIT ℃/W isc Product Specification
3AD53 isc website：.iscsemi.
1 isc & iscsemi is registered trademark
INCHANGE Semiconductor isc Silicon PNP Power Transistors isc Product Specification
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL...
