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3DA882 - Silicon NPN Power Transistor

General Description

High Collector Current-IC= 3.0A Low Saturation Voltage - : VCE(sat)= 0.5V(Max)@ IC= 2.0A, IB= 0.2A Good Linearity of hFE Complement to Type 3CA772 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Suited for the output stag

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isc Silicon NPN Power Transistor 3DA882 DESCRIPTION ·High Collector Current-IC= 3.0A ·Low Saturation Voltage - : VCE(sat)= 0.5V(Max)@ IC= 2.0A, IB= 0.2A ·Good Linearity of hFE ·Complement to Type 3CA772 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Suited for the output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3.0 A 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.