3DD325 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.5V(Max) @IC= 0.5A APPLICATIONS ·Designed for B/W TV vertical output applications.
3DD325 is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
| Part Number | Description |
|---|---|
| 3DD101A | Silicon NPN Power Transistor |
| 3DD101B | Silicon NPN Power Transistor |
| 3DD102 | Silicon NPN Power Transistor |
| 3DD102A | Silicon NPN Power Transistor |
| 3DD102B | Silicon NPN Power Transistor |
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.5V(Max) @IC= 0.5A APPLICATIONS ·Designed for B/W TV vertical output applications.