3DD325
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V(Min)
- Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.5V(Max) @IC= 0.5A
APPLICATIONS
- Designed for B/W TV vertical output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO VCEO VEBO
Collector-Base Voltage
3DD325A Collector-Emitter Voltage
3DD325B
Emitter-Base Voltage
50 30 50 4
IC Collector Current-Continuous
Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
1.5 A
1.8 W
150 ℃
-55~150 ℃ isc website：.iscsemi.cn
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1m A; IB= 0
3DD325A 3DD325B
30 50
V(BR)EBO Emitter-Base Breakdown...
