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3DD325 - Silicon NPN Power Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.5V(Max) @IC= 0.5A APPLICATIONS

Designed for B/W TV vertical output applications.

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Full PDF Text Transcription for 3DD325 (Reference)

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD325 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·Low Colle...

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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.5V(Max) @IC= 0.5A APPLICATIONS ·Designed for B/W TV vertical output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO Collector-Base Voltage 3DD325A Collector-Emitter Voltage 3DD325B Emitter-Base Voltage 50 30 50 4 V V V IC Collector Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 1.5 A 1.8 W 25 150 ℃ -55~150 ℃ isc website：www.iscsemi.

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