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3DD4515 - Silicon NPN Power Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC=10A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier,high speed switching and reg

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isc Silicon NPN Power Transistor 3DD4515 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC=10A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier,high speed switching and regulated power supply applications.