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3DD4515 - Silicon NPN Power Transistor

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Part number 3DD4515
Manufacturer Inchange Semiconductor
File Size 214.58 KB
Description Silicon NPN Power Transistor
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Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC=10A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier,high speed switching and regulated power supply applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base V

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