Datasheet Details
| Part number | 3DG13007 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 157.50 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 3DG13007-InchangeSemiconductor.pdf |
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| Part number | 3DG13007 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 157.50 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 3DG13007-InchangeSemiconductor.pdf |
|
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|
·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collector Saturation Voltage : VCE(sat) = 2.0(Max) @ IC= 5.0A ·Switching Time : tf= 0.9μs(Max.)@ IC= 5.0A APPLICATIONS ·Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit, they are particularly suited for 115 and 220V switchmode applications such as switching regulators,inverters,Motor controls,Solenoid/Relay drivers and deflection circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9V IC Collector Current-Continuous 8A ICM Collector Current-peak 16 A IB Base Current 4A IBM Base Current-Peak 8A IE Emitter Current 12 A IEM Emitter Current-Peak PC Collector Power Dissipation TC=25℃ Ti Junction Temperature Tstg Storage Temperature Range 24 80 150 -65~150 A W ℃ â„
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