Datasheet4U Logo Datasheet4U.com

3N40 - N-Channel MOSFET Transistor

Key Features

  • Drain Current ID= 3A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 400V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 2.6Ω(Max).
  • Fast Switching.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation 3N40.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.6Ω(Max) ·Fast Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation 3N40 ·APPLICATIONS ·Switch regulators ·Switching converters motor drivers and relay drivers ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 400 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 3 A IDM Drain Current-Single Plused 12 A PD Total Dissipation @TC=25℃ 28 W Tj Max.