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3N75 - N-Channel MOSFET Transistor

Datasheet Summary

Features

  • Drain Current ID=3.0A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 750V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 7.0Ω(Max).
  • Fast Switching.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet Details

Part number 3N75
Manufacturer Inchange Semiconductor
File Size 227.32 KB
Description N-Channel MOSFET Transistor
Datasheet download datasheet 3N75 Datasheet
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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID=3.0A@ TC=25℃ ·Drain Source Voltage- : VDSS= 750V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 7.0Ω(Max) ·Fast Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching power supplies,converters,AC and DC motor controls ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 750 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 3 A IDM Drain Current-Single Plused 8 A PD Total Dissipation @TC=25℃ 75 W Tj Max.
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