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3N90 - N-Channel MOSFET Transistor

Key Features

  • Drain Current ID= 3A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 900V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 4.8Ω(Max).
  • Fast Switching.

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Full PDF Text Transcription for 3N90 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 3N90. For precise diagrams, and layout, please refer to the original PDF.

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 3N90 ·FEATURES ·Drain Current ID= 3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·St...

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in Current ID= 3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.8Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching power supplies,converters,AC and DC motor controls ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 900 ±30 V V ID Drain Current-Continuous 3A IDM Drain Current-Single Plused 10 A PD Total Dissipation @TC=25℃ 75 W Tj Max.

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