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3N90 - N-Channel MOSFET Transistor

Features

  • Drain Current ID= 3A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 900V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 4.8Ω(Max).
  • Fast Switching.

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Datasheet Details

Part number 3N90
Manufacturer Inchange Semiconductor
File Size 62.12 KB
Description N-Channel MOSFET Transistor
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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 3N90 ·FEATURES ·Drain Current ID= 3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.8Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching power supplies,converters,AC and DC motor controls ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 900 ±30 V V ID Drain Current-Continuous 3A IDM Drain Current-Single Plused 10 A PD Total Dissipation @TC=25℃ 75 W Tj Max.
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