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4N35 - N-Channel MOSFET Transistor

General Description

Drain Current ID= 4A@ TC=25℃ Drain Source Voltage- : VDSS= 350V(Min) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VA

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 350V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 350 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 4 A ID(puls) Pulse Drain Current 16 A Ptot Total Dissipation@TC=25℃ 75 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 3 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62.