Download 4N35 Datasheet PDF
Inchange Semiconductor
4N35
DESCRIPTION - Drain Current ID= 4A@ TC=25℃ - Drain Source Voltage- : VDSS= 350V(Min) - Fast Switching Speed - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) Gate-Source Voltage ±30 Drain Current-continuous@ TC=25℃ ID(puls) Pulse Drain Current Ptot Total Dissipation@TC=25℃ Tj Max. Operating Junction Temperature ℃ Tstg Storage Temperature Range -55~150 ℃ - THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to...
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Representative 4N35 image (package may vary by manufacturer)