4N35 datasheet by Inchange Semiconductor.
| Part number | 4N35 |
|---|---|
| Datasheet | 4N35-InchangeSemiconductor.pdf |
| File Size | 226.14 KB |
| Manufacturer | Inchange Semiconductor |
| Description | N-Channel MOSFET Transistor |
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·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 350V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·General purpose power amplifier RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 350 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 4 A ID(puls) Pulse Drain Current 16 A Ptot...
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4N35 | 6-Pin DIP Optoisolators | Motorola Inc |
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4N35 | PHOTO TRANSISTOR | Toshiba Semiconductor |
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