4N55
4N55 is N-Channel MOSFET Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Drain Current ID= 4A@ TC=25℃
- Drain Source Voltage-
: VDSS= 550V(Min)
- Fast Switching Speed
APPLICATIONS
- General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
VGS Gate-Source Voltage
ID Drain Current-continuous@ TC=25℃
550 ±30
ID(puls)
Pulse Drain Current
10 A
Ptot Total Dissipation@TC=25℃
40 W
Tj Max. Operating Junction Temperature 150 ℃
Tstg Storage Temperature Range
-55~150 ℃
- THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Rth j-a
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
3 ℃/W 62.5 ℃/W isc website：.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdf Factory Pro
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INCHANGE Semiconductor isc N-Channel MOSFET Transistor
- ELECTRICAL CHARACTERISTICS (TC=25℃) isc Product Specification
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown...
