Datasheet Details
| Part number | 4N55 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 59.79 KB |
| Description | N-Channel MOSFET Transistor |
| Download | 4N55 Download (PDF) |
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Overview: INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product.
| Part number | 4N55 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 59.79 KB |
| Description | N-Channel MOSFET Transistor |
| Download | 4N55 Download (PDF) |
|
|
|
·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 550V(Min) ·Fast Switching Speed APPLICATIONS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage ID Drain Current-continuous@ TC=25℃ 550 ±30 4 V V A ID(puls) Pulse Drain Current 10 A Ptot Total Dissipation@TC=25℃ 40 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 3 ℃/W 62.5 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) isc Product Specification 4N55 SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage VSD Diode Forward On-Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current CONDITIONS VGS= 0;
ID= 250µA VDS= VGS;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
4N55 | Transistor Output Optocouplers | HP |
 |
4N55 | Transistor Output Optocouplers | Broadcom |
| Part Number | Description |
|---|---|
| 4N50 | N-Channel MOSFET Transistor |