Datasheet Details
| Part number | 50N06 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 59.73 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet |
 50N06 Datasheet
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| Part number | 50N06 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 59.73 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet |
50N06 Datasheet
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·Drain Current ID= 50A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Fast Switching Speed ·APPLICATIONS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 60 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 50 A Ptot Total Dissipation@TC=25℃ 150 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 0.96 ℃/W 62.5 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) isc Product Specification 50N06 SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage VSD Diode Forward On-Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current CONDITIONS VGS= 0;
ID= 250µA VDS= VGS;
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 50N06.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| CHONGQING PINGYANG | 50N06 | N-CHANNEL MOSFET | CHONGQING PINGYANG |
| ETC | 50N06 | Low voltage high current power MOSFET | ETC |
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50N06 | N-CHANNEL POWER MOSFET | UTC |
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50N06 | N-CHANNEL MOSFET | KIA |
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50N06 | Power-Transistor | Tuofeng Semiconductor |
| Part Number | Description |
|---|---|
| 50N20 | N-Channel MOSFET Transistor |