55N10 - N-Channel MOSFET Transistor

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Description

Drain Current ID= 55A@ TC=25℃ Drain Source Voltage- : VDSS= 100V(Min) Fast Switching Speed APPLICATIONS General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage ID Drain Current

Inchange Semiconductor

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Datasheet Details

Part number	55N10
Manufacturer	Inchange Semiconductor
File Size	43.29 KB
Description	N-Channel MOSFET Transistor
Datasheet	55N10 Datasheet
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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 55N10 DESCRIPTION ·Drain Current ID= 55A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Fast Switching Speed APPLICATIONS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage ID Drain Current-continuous@ TC=25℃ 100 ±30 55 V V A ID(puls) Pulse Drain Current 275 A Ptot Total Dissipation@TC=25℃ 250 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 0.5 ℃/W 62.5 ℃/W isc website：www.iscsemi.

Published: Jul 26, 2016 |