Datasheet Details
| Part number | 55N10 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 43.29 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | 55N10-InchangeSemiconductor.pdf |
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Overview: INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product.
| Part number | 55N10 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 43.29 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | 55N10-InchangeSemiconductor.pdf |
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·Drain Current ID= 55A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Fast Switching Speed APPLICATIONS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage ID Drain Current-continuous@ TC=25℃ 100 ±30 55 V V A ID(puls) Pulse Drain Current 275 A Ptot Total Dissipation@TC=25℃ 250 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 0.5 ℃/W 62.5 ℃/W isc website：.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro .fineprint.cn INCHANGE Semiconductor isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) isc Product Specification 55N10 SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage VSD Diode Forward On-Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance CONDITIONS VGS= 0;
ID= 250µA VDS= VGS;
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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55N10 | FQA55N10 | Fairchild Semiconductor |
| Part Number | Description |
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