Datasheet Details
| Part number | 6N55 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 56.08 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet |
 6N55 Datasheet
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| Part number | 6N55 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 56.08 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet |
6N55 Datasheet
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·Drain Current ID= 6.0A@ TC=25℃ ·Drain Source Voltage- : VDSS= 550V(Min) ·Fast Switching Speed APPLICATIONS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage ID Drain Current-continuous@ TC=25℃ 550 ±30 6.0 V V A ID(puls) Pulse Drain Current 30 A Ptot Total Dissipation@TC=25℃ 150 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 1.0 ℃/W 62.5 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) isc Product Specification 6N55 SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
ID=250µA VGS(th) Gate Threshold Voltage VSD Diode Forward On-Voltage VDS= VGS;
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product.
| Part Number | Description |
|---|---|
| 6N50 | N-Channel MOSFET Transistor |