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75N06 - N-Channel MOSFET Transistor

General Description

High current capability Drain Source Voltage- : VDSS= 60V(Min) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Regulator High current,high speed switching Solenoid and relay drivers ABSOLUT

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor 75N06 ·DESCRIPTION ·High current capability ·Drain Source Voltage- : VDSS= 60V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Regulator ·High current,high speed switching ·Solenoid and relay drivers ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 60 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 75 A ID(puls) Pulse Drain Current 300 A Ptot Total Dissipation@TC=25℃ 150 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.