Datasheet Details
| Part number | 75N06 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 229.44 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | 75N06-InchangeSemiconductor.pdf |
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Overview: isc N-Channel MOSFET Transistor INCHANGE Semiconductor 75N06.
| Part number | 75N06 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 229.44 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | 75N06-InchangeSemiconductor.pdf |
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·High current capability ·Drain Source Voltage- : VDSS= 60V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Regulator ·High current,high speed switching ·Solenoid and relay drivers ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 60 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 75 A ID(puls) Pulse Drain Current 300 A Ptot Total Dissipation@TC=25℃ 150 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.67 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE Semiconductor 75N06 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
| Part Number | Description |
|---|---|
| 75N05 | N-Channel MOSFET Transistor |
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| 75N10 | N-Channel MOSFET Transistor |
| 75N75 | TO-263 N-Channel MOSFET Transistor |