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75N75 - TO-263 N-Channel MOSFET Transistor

Key Features

  • Drain Current.
  • ID= 75A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 75V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 0.011Ω(Max).
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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isc N-Channel MOSFET Transistor 75N75 FEATURES ·Drain Current –ID= 75A@ TC=25℃ ·Drain Source Voltage- : VDSS= 75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.011Ω(Max) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Solenoid and relay drivers ·DC motor control ·DC-DC converters DC ·Automotive environment ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 75 V VGS Gate-Source Voltage-Continuous ±20 V Drain Current-Continuous@TC=25℃ 75 ID A Drain Current-Continuous@TC=100℃ 60 IDM Drain Current-Single Pluse 300 A PD Total Dissipation @TC=25℃ 150 W TJ Max.