Datasheet Details
| Part number | 8N20 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 43.68 KB |
| Description | N-Channel MOSFET Transistor |
| Download | 8N20 Download (PDF) |
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| Part number | 8N20 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 43.68 KB |
| Description | N-Channel MOSFET Transistor |
| Download | 8N20 Download (PDF) |
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·Drain Current ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Fast Switching Speed ·APPLICATIONS ·General purpose power amplifier ·ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage ID Drain Current-continuous@ TC=25℃ 200 ±20 8 V V A ID(puls) Pulse Drain Current 20 A Ptot Total Dissipation@TC=25℃ 75 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.67 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) isc Product Specification 8N20 SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
ID=1mA VGS(th) Gate Threshold Voltage VSD Diode Forward On-Voltage VDS= VGS;
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 8N20.
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