8N55 - N-Channel MOSFET Transistor

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Description

Drain Current ID= 8A@ TC=25℃ Drain Source Voltage- : VDSS= 550V(Min) Fast Switching Speed APPLICATIONS General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage ID Drain Current-

Inchange Semiconductor

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Datasheet Details

Part number	8N55
Manufacturer	Inchange Semiconductor
File Size	66.86 KB
Description	N-Channel MOSFET Transistor
Datasheet	8N55 Datasheet
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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 8N55 DESCRIPTION ·Drain Current ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 550V(Min) ·Fast Switching Speed APPLICATIONS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage ID Drain Current-continuous@ TC=25℃ 550 ±20 8 V V A ID(puls) Pulse Drain Current 32 A Ptot Total Dissipation@TC=25℃ 75 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.83 ℃/W isc website：www.iscsemi.

Published: Jul 10, 2016 |