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8N65 - N-Channel Mosfet Transistor

Key Features

  • Drain Current.
  • ID= 8A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 650V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 1.4Ω(Max).
  • Avalanche Energy Specified.
  • Fast Switching.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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isc N-Channel Mosfet Transistor INCHANGE Semiconductor 8N65 ·FEATURES ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.4Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High efficiency switch mode power supply ·PWM motor controls ·High efficient DC to DC converters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 8 A IDM Drain Current-Single Plused 32 A PD Total Dissipation @TC=25℃ 147 W Tj Max.