8N65 - N-Channel Mosfet Transistor

Datasheet Summary

Features

Drain Current.
ID= 8A@ TC=25℃.
Drain Source Voltage- : VDSS= 650V(Min).
Static Drain-Source On-Resistance : RDS(on) = 1.4Ω(Max).
Avalanche Energy Specified.
Fast Switching.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

Inchange Semiconductor

📥 Download Datasheet

Datasheet Details

Part number	8N65
Manufacturer	Inchange Semiconductor
File Size	228.74 KB
Description	N-Channel Mosfet Transistor
Datasheet	8N65 Datasheet
Additional preview pages of the 8N65 datasheet.

📁 Similar Datasheet

8N65 - N-CHANNEL MOSFET (CHONGQING PINGYANG)
8N65 - N-CHANNEL POWER MOSFET (Unisonic Technologies)
8N65-ML - N-CHANNEL POWER MOSFET (UTC)
8N65B - N-CHANNEL MOSFET (CHONGQING PINGYANG)
8N65F - N-CHANNEL MOSFET (CHONGQING PINGYANG)
8N65H - N-CHANNEL MOSFET (CHONGQING PINGYANG)
8N65K-MT - N-CHANNEL POWER MOSFET (Unisonic Technologies)
8N65K-MTQ - N-CHANNEL MOSFET (UTC)
8N60 - N-Channel Power MOSFET (nELL)
8N60 - N-CHANNEL MOSFET (CHONGQING PINGYANG)

Other Datasheets by Inchange Semiconductor

Full PDF Text Transcription

Click to expand full text

isc N-Channel Mosfet Transistor INCHANGE Semiconductor 8N65 ·FEATURES ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.4Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High efficiency switch mode power supply ·PWM motor controls ·High efficient DC to DC converters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 8 A IDM Drain Current-Single Plused 32 A PD Total Dissipation @TC=25℃ 147 W Tj Max.

Published: Dec 16, 2016 |