Datasheet Details
| Part number | 9N65 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 62.00 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | 9N65-InchangeSemiconductor.pdf |
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Overview: INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 9N65.
| Part number | 9N65 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 62.00 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | 9N65-InchangeSemiconductor.pdf |
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·Drain Current ID= 9A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Fast Switching Speed ·APPLICATIONS ·General purpose power amplifier ·ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage ID Drain Current-continuous@ TC=25℃ 650 ±20 9 V V A ID(puls) Pulse Drain Current 36 A Ptot Total Dissipation@TC=25℃ 125 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.67 ℃/W isc website：.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro .fineprint.cn INCHANGE Semiconductor isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) isc Product Specification 9N65 SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage VSD Diode Forward On-Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance tr Rise Time td(on) Turn-on Delay Time tf Fall Time td(off) Turn-off Delay Time CONDITIONS VGS= 0;
ID=250µA VDS= VGS;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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9N65 | N-CHANNEL POWER MOSFET | UTC |
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9N65-TC | N-CHANNEL POWER MOSFET | UTC |
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9N65K-MT | N-CHANNEL POWER MOSFET | Unisonic Technologies |
| Part Number | Description |
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