A1659
A1659 is 2SA1659 manufactured by Inchange Semiconductor.
DESCRIPTION
- High Collector-Emitter Breakdown Voltage VCEO= -160V(Min)
- plement to Type 2SC4370
- Full-mold package that does not require an insulating board or bushing when mounting. APPLICATIONS
- Designed for high voltage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
-160
VCEO
Collector-Emitter Voltage
-160
VEBO
Emitter-Base Voltage
-5.0
IC(DC)
Collector Current(DC)
-1.5
IB(DC)
Base Current Collector Power Dissipation @TC=25℃ Junction Temperature
-0.15
W ℃
Tstg
Storage Temperature
-55~150
℃ isc Website：.iscsemi.cn
Free Datasheet http://.0PDF.
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SA1659
TYP....
