A1659 Overview
·High Collector-Emitter Breakdown Voltage VCEO= -160V(Min) ·plement to Type 2SC4370 ·Full-mold package that does not require an insulating board or bushing when mounting. INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SA1659 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA.