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A1659 - 2SA1659

General Description

High Collector-Emitter Breakdown Voltage VCEO= -160V(Min) Complement to Type 2SC4370

Full-mold package that does not require an insulating board or bushing when mounting.

Designed for high voltage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE

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Other Datasheets by Inchange Semiconductor

Part Number Description
A1658 2SA1658

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www.DataSheet4U.net INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1659 DESCRIPTION ·High Collector-Emitter Breakdown Voltage VCEO= -160V(Min) ·Complement to Type 2SC4370 ·Full-mold package that does not require an insulating board or bushing when mounting. APPLICATIONS ·Designed for high voltage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5.0 V IC(DC) Collector Current(DC) -1.5 A IB(DC) Base Current Collector Power Dissipation @TC=25℃ Junction Temperature -0.15 A PC 20 W ℃ TJ 150 Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn Free Datasheet http://www.0PDF.