APT13005SU-G1 - Silicon NPN Power Transistor

Inchange Semiconductor

General Description

High Collector-Emitter Voltage : VCES= 700V(Min.) Fast Switching Speed Collector Saturation Voltage : VCE(sat) = 0.3V(Max) @ IC= 1.0A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Battery charges for Mobile Phone of BCD Sol

📥 Download Datasheet

APT13005SU-G1 silicon npn power transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	APT13005SU-G1
Manufacturer	Inchange Semiconductor
File Size	227.40 KB
Description	Silicon NPN Power Transistor
Datasheet	APT13005SU-G1 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
APT13005S	HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR	BCD
APT13005S	450V NPN HIGH VOLTAGE POWER TRANSISTOR	Diodes
APT13005	450V NPN HIGH VOLTAGE POWER TRANSISTOR	Diodes
APT13005D	450V NPN HIGH VOLTAGE POWER TRANSISTOR	Diodes
APT13003D	450V NPN HIGH VOLTAGE POWER TRANSISTOR	Diodes

Other Datasheets by Inchange Semiconductor

Part Number	Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

isc Silicon NPN Power Transistor isc Product Specification APT13005SU-G1 DESCRIPTION · High Collector-Emitter Voltage : VCES= 700V(Min.) ·Fast Switching Speed ·Collector Saturation Voltage : VCE(sat) = 0.3V(Max) @ IC= 1.0A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Battery charges for Mobile Phone of BCD Solution ·Power supply for DVD/STB of BCD Solution ·Driver for LED Lighting of BCD Solution ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 700 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 9V IC Collector Current-Continuous 3.2 A ICM Collector Current-Peak 6.