Datasheet Details
| Part number | B1217 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 100.97 KB |
| Description | 2SB1217 |
| Datasheet | B1217-InchangeSemiconductor.pdf |
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Overview: INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product.
| Part number | B1217 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 100.97 KB |
| Description | 2SB1217 |
| Datasheet | B1217-InchangeSemiconductor.pdf |
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·High Collector Current -IC= -3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·plement to Type 2SD1818 APPLICATIONS ·Designed for use in DC-DC converter, driver, solenid and motor .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3 A ICP Collector Current-Pulse -5 A IBB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature Tstg Storage Temperature Range -0.5 10 1.3 150 -55~150 A W ℃ ℃ isc Website：.iscsemi.cn Free Datasheet http://../ INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SB1217 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -1.5A;
IB=B -0.15A VBE(sat) Base-Emitter Saturation Voltage IC= -1.5A;
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