Datasheet Details
| Part number | BD107 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.62 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | BD107-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | BD107 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.62 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | BD107-InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 65V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for driver and output stages and high Power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 65 V VCEO Collector-Emitter Voltage 65 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2.5 A 12 W 175 ℃ Tstg Storage Temperature Range -55~175 ℃ BD107 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(SUS) Collector-Emitter Saturation Voltage IC= 10mA ;
IB= 0 VCE(SAT) Base-Emitter Saturation Voltage IC= 2.5A;
| Part Number | Description |
|---|---|
| BD134 | Silicon PNP Power Transistor |
| BD189 | Silicon NPN Power Transistor |