Datasheet Details
| Part number | BD189 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.83 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | BD189-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor BD189.
| Part number | BD189 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.83 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | BD189-InchangeSemiconductor.pdf |
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·DC Current Gain- : hFE= 40(Min)@ IC= 0.5A ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= 60V(Min) ·plement to type BD190 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in 5~10 Watt audio amplifiers utilizing plementary or quasi plementary circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2 A 40 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 3.12 ℃/W isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BD189 | 4 Ampere Power Transistor | Motorola |
| Part Number | Description |
|---|---|
| BD107 | Silicon NPN Power Transistor |
| BD134 | Silicon PNP Power Transistor |