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BD189 - Silicon NPN Power Transistor

General Description

DC Current Gain- : hFE= 40(Min)@ IC= 0.5A Collector-Emitter Sustaining Voltage - : VCEO(SUS)= 60V(Min) Complement to type BD190 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in 5~10 Watt audio amplifiers util

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isc Silicon NPN Power Transistor BD189 DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= 0.5A ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= 60V(Min) ·Complement to type BD190 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in 5~10 Watt audio amplifiers utilizing Complementary or quasi complementary circuits.