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BD237 - Silicon NPN Power Transistors

Download the BD237 datasheet PDF. This datasheet also covers the BD233 variant, as both devices belong to the same silicon npn power transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

DC Current Gain- : hFE= 40(Min)@ IC= 0.15A Complement to Type BD234/236/238 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in 5~10 watt audio amplifiers and drivers utilizing complementary or quasi complementary c

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BD233-InchangeSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
BD237 Plastic Medium Power Silicon NPN Transistor Motorola Inc
BD237 Low voltage NPN power transistors STMicroelectronics
BD237 NPN Transistor Fairchild Semiconductor
BD237 Silicon NPN Transistor Toshiba
BD237 EPITAXIAL SILICON POWER TRANSISTORS CDIL

Other Datasheets by Inchange Semiconductor

Part Number Description
BD233 Silicon NPN Power Transistors
BD234 Silicon PNP Power Transistor
BD235 Silicon NPN Power Transistors
BD236 Silicon PNP Power Transistor
BD238 Silicon PNP Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor INCHANGE Semiconductor BD233/235/237 DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= 0.15A ·Complement to Type BD234/236/238 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in 5~10 watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.