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BD245D Datasheet Silicon NPN Power Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistor.

General Description

·Excellent Safe Operating Area ·DC Current Gain- : hFE>40@IC = 1A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1 V(Max)@ IC = 3A ·Designed for Complementary Use with the BD246D ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose switching and amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-base Voltage 5 V IC Collector Current-Continuous 10 A IB Base Current 7 A PC Collector Power Dissipation@TC=25℃ 80 W Tj Junction Tmperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal Resistance,Junction to Case 1.56 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 42 ℃/W BD245D isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A ;IB= 0.3A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A ;IB= 2.5A VBE(on)-1 Base-Emitter On Voltage IC= 3A ;

VCE= 4V VBE(on)-2 Base-Emitter On Voltage IC= 10A ;

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