Excellent Safe Operating Area
DC Current Gain-
: hFE>40@IC = 1A
Collector-Emitter Saturation Voltage-
: VCE(sat)= 1 V(Max)@ IC = 3A
Designed for Complementary Use with the BD246D
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
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isc Silicon NPN Power Transistor
DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-
: hFE>40@IC = 1A ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1 V(Max)@ IC = 3A ·Designed for Complementary Use with the BD246D ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general-purpose switching and amplifier
applications.
BD245D Datasheet
