Download BD245D Datasheet PDF
Inchange Semiconductor
BD245D
DESCRIPTION - Excellent Safe Operating Area - DC Current Gain- : h FE>40@IC = 1A - Collector-Emitter Saturation Voltage- : VCE(sat)= 1 V(Max)@ IC = 3A - Designed for plementary Use with the BD246D - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for general-purpose switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-base Voltage Collector Current-Continuous Base Current Collector Power Dissipation@TC=25℃ Tj Junction Tmperature ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL...