Datasheet Details
| Part number | BD263 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.79 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | BD263-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Darlington Power Transistor.
| Part number | BD263 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.79 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | BD263-InchangeSemiconductor.pdf |
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·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 60V ·DC Current Gain— : hFE = 750(Min) @ IC= 1.5 A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as output devices in plementary general-purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IB Base Current PC Collector Power Dissipation TC=25℃ Ti Junction Temperature 0.1 A 36 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 3.13 ℃/W BD263 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA;
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