Datasheet Details
| Part number | BD369 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.31 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | BD369-InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistors.
| Part number | BD369 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.31 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | BD369-InchangeSemiconductor.pdf |
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·Low Collector-Emitter Saturation Voltage- : VCE(sat)=-1.0V(Max)@ IC=-10A ·DC Current Gain- : hFE= 20(Min)@IC=-10A ·Excellent Safe Operating Area ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose power amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -25 A ICM Collector Current-Peak -50 A IB Base Current-Continuous -7.5 A PD Total Power Dissipation @TC=25℃ 200 W Tj Junction Temperature -65~200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 0.875 UNIT ℃/W BD369 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage (1) VCE(sat)-1 Collector-Emitter Saturation Voltage CONDITIONS IC= -50mA ;IB= 0 IC= -10A;
| Part Number | Description |
|---|---|
| BD330 | Silicon PNP Power Transistor |