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BD678AG
DESCRIPTION - Collector- Emitter Breakdown Voltage- : V(BR)CEO = -60V - DC Current Gain- : h FE = 750(Min) @ IC= -2 A - plement to Type BD677A - G=Pb-Free Package APPLICATIONS - Designed for use as output devices in plementary general-purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A IB Base Current Collector Power Dissipation TC=25℃ Ti Junction Temperature Tstg Storage Temperature Range -0.1 40 -55~150 -55~150 A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 3.13 ℃/W isc website:.iscsemi. 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Darlington Power...