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BD678AG - Silicon PNP Power Transistor

General Description

Collector Emitter Breakdown Voltage : V(BR)CEO = -60V DC Current Gain : hFE = 750(Min) @ IC= -2 A Complement to Type BD677A G=Pb-Free Package APPLICATIONS

general-purpose amplifier applications.

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INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor isc Product Specification BD678AG DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = -60V ·DC Current Gain— : hFE = 750(Min) @ IC= -2 A ·Complement to Type BD677A ·G=Pb-Free Package APPLICATIONS ·Designed for use as output devices in complementary general-purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A IB Base Current PC Collector Power Dissipation TC=25℃ Ti Junction Temperature Tstg Storage Temperature Range -0.