Datasheet Details
| Part number | BD678AG |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 153.02 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | BD678AG-InchangeSemiconductor.pdf |
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Overview: INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor isc Product.
| Part number | BD678AG |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 153.02 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | BD678AG-InchangeSemiconductor.pdf |
|
|
|
·Collector–Emitter Breakdown Voltage— : V(BR)CEO = -60V ·DC Current Gain— : hFE = 750(Min) @ IC= -2 A ·Complement to Type BD677A ·G=Pb-Free Package APPLICATIONS ·Designed for use as output devices in complementary general-purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A IB Base Current PC Collector Power Dissipation TC=25℃ Ti Junction Temperature Tstg Storage Temperature Range -0.1 40 -55~150 -55~150 A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 3.13 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Darlington Power Transist
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BD678AG | PNP Transistor | ON Semiconductor |
 |
BD678A | Complementary power Darlington transistors | STMicroelectronics |
 |
BD678A | PNP Epitaxial Silicon Transistor | Fairchild Semiconductor |
 |
BD678A | PNP Transistor | Motorola Inc |
|
BD678A | PNP Silicon Transistor | ON Semiconductor |
| Part Number | Description |
|---|---|
| BD634 | Silicon PNP Power Transistor |
| BD635 | Silicon NPN Power Transistor |
| BD637 | Silicon NPN Power Transistor |
| BD638 | Silicon PNP Power Transistor |
| BD644 | Silicon PNP Darlington Power Transistor |
| BD684 | Silicon PNP Power Transistor |