| Part number | BD684 |
|---|---|
| Datasheet | BD684-InchangeSemiconductor.pdf |
| File Size | 189.89 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon PNP Power Transistor |
|
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·Collector Emitter Breakdown Voltage : V(BR)CEO = -120V ·DC Current Gain : hFE = 750(Min) @ IC= -1.5 A ·plement to Type BD683 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and video output applications.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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BD684 | PNP DARLIGNTON POWER SILICON TRANSISTORS | CDIL |
 |
BD684 | SILICON PNP TRANSISTOR | Central Semiconductor |
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BD684 | SILICON DARLINGTON POWER TRANSISTORS | Comset Semiconductors |
|
BD684A | SILICON DARLINGTON POWER TRANSISTORS | Comset Semiconductors |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| BD634 | Silicon PNP Power Transistor |
| BD635 | Silicon NPN Power Transistor |
| BD637 | Silicon NPN Power Transistor |
| BD638 | Silicon PNP Power Transistor |
| BD644 | Silicon PNP Darlington Power Transistor |
| BD678AG | Silicon PNP Power Transistor |
