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BD684 - Silicon PNP Power Transistor

General Description

Collector Emitter Breakdown Voltage : V(BR)CEO = -120V DC Current Gain : hFE = 750(Min) @ IC= -1.5 A Complement to Type BD683 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and vide

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isc Silicon PNP Darlington Power Transistor BD684 DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = -120V ·DC Current Gain— : hFE = 750(Min) @ IC= -1.5 A ·Complement to Type BD683 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and video output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak -6 A IB Base Current PC Collector Power Dissipation TC=25℃ Ti Junction Temperature Tstg Storage Temperature Range -0.