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BD684 Datasheet Silicon PNP Power Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon PNP Darlington Power Transistor BD684.

General Description

·Collector–Emitter Breakdown Voltage— : V(BR)CEO = -120V ·DC Current Gain— : hFE = 750(Min) @ IC= -1.5 A ·Complement to Type BD683 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and video output applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak -6 A IB Base Current PC Collector Power Dissipation TC=25℃ Ti Junction Temperature Tstg Storage Temperature Range -0.1 A 40 W 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 3.12 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA;

IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1.5A;

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