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BD734 - Silicon PNP Power Transistor

General Description

DC Current Gain - : hFE = 40(Min.)@ IC= -20mA Collector-Emitter Breakdown Voltage- : V(BR)CEO= -25V(Min.) Complement to Type BD733 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for amplifier and switching application

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isc Silicon PNP Power Transistor DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= -20mA ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -25V(Min.) ·Complement to Type BD733 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for amplifier and switching applications.