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BD791 - Silicon NPN Power Transistor

General Description

High Collector Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) High DC Current Gain @ IC = 200 mAdc hFE = 40 250 Low Collector Emitter Saturation Voltage VCE(sat) = 0.5 Vdc (Max) @ IC = 500 mAdc Minimum Lot-to-Lot variati

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isc Silicon NPN Power Transistor BD791 DESCRIPTION ·High Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) • High DC Current Gain @ IC = 200 mAdc hFE = 40–250 • Low Collector–Emitter Saturation Voltage — VCE(sat) = 0.5 Vdc (Max) @ IC = 500 mAdc ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low power audio amplifier and low current, high-speed switching applications.