Datasheet Details
| Part number | BD791 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.71 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | BD791-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor BD791.
| Part number | BD791 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.71 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | BD791-InchangeSemiconductor.pdf |
|
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·High Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) • High DC Current Gain @ IC = 200 mAdc hFE = 40–250 • Low Collector–Emitter Saturation Voltage — VCE(sat) = 0.5 Vdc (Max) @ IC = 500 mAdc ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low power audio amplifier and low current, high-speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 8 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 15 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 8.34 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BD791 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Voltage Sustaining IC= 10mA;
IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 0.5A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BD791 | NPN Plastic Silicon Power Transistor | ON Semiconductor |
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BD791 | NPN Silicon Power Transistor | Motorola |
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