BD939 - Silicon NPN Power Transistor

Inchange Semiconductor

General Description

DC Current Gain- : hFE= 40(Min)@ IC= 150mA Complement to Type BD934/936/938/940/942 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in output stages of audio and television amplifier circuits where high peak powers

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Datasheet Details

Part number	BD939
Manufacturer	Inchange Semiconductor
File Size	211.81 KB
Description	Silicon NPN Power Transistor
Datasheet	BD939 Datasheet

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Other Datasheets by Inchange Semiconductor

Part Number	Description
BD933	Silicon NPN Power Transistor
BD935	Silicon NPN Power Transistor
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isc Silicon NPN Power Transistor BD933/935/937/939/941 DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= 150mA ·Complement to Type BD934/936/938/940/942 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in output stages of audio and television amplifier circuits where high peak powers can occur. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BD933 45 BD935 60 VCBO Collector-Base Voltage BD937 100 BD939 120 BD941 140 BD933 45 VCEO Collector-Emitter Voltage BD935 60 BD937 80 BD939 100 BD941 120 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 3 ICM Collector Current-Peak 7 IB Base Current-Continuous 0.