DC Current Gain-
: hFE= 40(Min)@ IC= 500mA
Complement to Type BD950F/952F/954F/956F
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for power amplifier and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
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isc Silicon NPN Power Transistor
BD949F/951F/953F/955F
DESCRIPTION ·DC Current Gain-
: hFE= 40(Min)@ IC= 500mA ·Complement to Type BD950F/952F/954F/956F ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power amplifier and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BD949F
60
BD951F
80
VCBO
Collector-Base Voltage
V
BD953F
100
BD955F
120
BD949F
60
BD951F
80
VCEO
Collector-Emitter Voltage
V
BD953F
100
BD955F
120
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
8
A
22
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERI
BD949F Datasheet
