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BD950F Datasheet Silicon PNP Power Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon PNP Power Transistor BD950F/952F/954F/956F.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

·DC Current Gain- : hFE= 40(Min)@ IC= -500mA ·Complement to Type BD949F/951F/953F/955F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD950F -60 BD952F -80 VCBO Collector-Base Voltage V BD954F -100 BD956F -120 BD950F -60 BD952F -80 VCEO Collector-Emitter Voltage V BD954F -100 BD956F -120 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -8 A 22 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 8.12 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor BD950F/952F/954F/956F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD950F VCEO(SUS) Collector-Emitter Sustaining Voltage BD952F BD954F IC= -30mA ;

IB= 0 BD956F VCE(sat) Collector-Emitter Saturation Voltage IC= -2A;

IB= -0.2A VBE(on) ICBO ICEO Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current IC= -2A;

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