BDS12 - Silicon NPN Power Transistor

Datasheet Summary

Description

High Voltage: VCEV= 100V(Min) Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 5A High Reliablity Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

General puepose power.

Inchange Semiconductor

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Datasheet Details

Part number	BDS12
Manufacturer	Inchange Semiconductor
File Size	210.78 KB
Description	Silicon NPN Power Transistor
Datasheet	BDS12 Datasheet
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isc Silicon NPN Power Transistor BDS12 DESCRIPTION ·High Voltage: VCEV= 100V(Min) ·Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 5A ·High Reliablity ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power linear and switching application and General puepose power.

Published: Nov 15, 2016 |