BDS12
BDS12 is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- High Voltage: VCEV= 100V(Min)
- Low Saturation Voltage-
: VCE(sat)= 1.0V(Max)@ IC= 5A
- High Reliablity
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for power linear and switching application and
General puepose power.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
VCEV
Collector-Emitter Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Base Current
Collector Power Dissipation @ TC=25℃
Junction Temperature
Tstg
Storage Temperature Range
-65~150
UNIT V V V V A A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER...
