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BDW36 - Silicon NPN Power Transistor

General Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 180V(Min) High Switching Speed Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 10A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in industrial-

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isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 180V(Min) ·High Switching Speed ·Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 10A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in industrial-military power amplifier and switching circuit applications.